Morteza Gholipour

Publication Activity (10 Years)

Years Active: 2005-2022
Publications (10 Years): 15

Top Topics

Design Space Exploration

Schottky Barrier

Random Access Memory

Top Venues

Microelectron. J.

Int. J. Circuit Theory Appl.

Circuits Syst. Signal Process.

IEEE Trans. Circuits Syst. I Regul. Pap.

Publications

Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi
A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology. Circuits Syst. Signal Process. 41 (6) (2022)
Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour
A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins. IEEE Trans. Circuits Syst. I Regul. Pap. 69 (4) (2022)
Erfan Abbasian, Morteza Gholipour
A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications. Int. J. Circuit Theory Appl. 50 (5) (2022)
Erfan Abbasian, Morteza Gholipour
Improved read/write assist mechanism for 10-transistor static random access memory cell. Int. J. Circuit Theory Appl. 50 (10) (2022)
Erfan Abbasian, Shilpi Birla, Morteza Gholipour
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM. Microelectron. J. 123 (2022)
Erfan Abbasian, Morteza Gholipour
Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications. Circuits Syst. Signal Process. 41 (10) (2022)
Behnam Vakili, Morteza Gholipour
Enhanced overloaded code division multiple access for network on chip. IET Comput. Digit. Tech. 16 (2-3) (2022)
Farzaneh Izadinasab, Morteza Gholipour
Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology. Microelectron. J. 113 (2021)
Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design. Int. J. Circuit Theory Appl. 49 (11) (2021)
Erfan Abbasian, Morteza Gholipour
Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications. Int. J. Circuit Theory Appl. 49 (4) (2021)
Ehsan Mahmoodi, Morteza Gholipour
Design space exploration of low-power flip-flops in FinFET technology. Integr. 75 (2020)
Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour
ratio. IET Circuits Devices Syst. 13 (3) (2019)
Morteza Gholipour, Ying-Yu Chen, Deming Chen
Compact Modeling to Device- and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 37 (4) (2018)
Ying-Yu Chen, Morteza Gholipour, Deming Chen
Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling. ASP-DAC (2016)
Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen
Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis. IEEE Trans. Very Large Scale Integr. Syst. 24 (2) (2016)
Morteza Gholipour, Nasser Masoumi
Graphene nanoribbon crossbar architecture for low power and dense circuit implementations. Microelectron. J. 45 (11) (2014)
Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Deming Chen
Highly accurate SPICE-compatible modeling for single- and double-gate GNRFETs with studies on technology scaling. DATE (2014)
Ying-Yu Chen, Amit Sangai, Morteza Gholipour, Deming Chen
Graphene nano-ribbon field-effect transistors as future low-power devices. ISLPED (2013)
Morteza Gholipour, Nasser Masoumi
Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures. Microelectron. J. 44 (3) (2013)
Ying-Yu Chen, Amit Sangai, Morteza Gholipour, Deming Chen
Schottky-barrier-type Graphene Nano-Ribbon Field-Effect Transistors: A study on compact modeling, process variation, and circuit performance. NANOARCH (2013)
Morteza Gholipour, Nasser Masoumi
Efficient inclusive analytical model for delay estimation of multi-walled carbon nanotube interconnects. IET Circuits Devices Syst. 6 (4) (2012)
Morteza Gholipour
Design and Implementation of Lifting Based Integer Wavelet Transform for Image Compression Applications. DICTAP (1) (2011)
Morteza Gholipour, Nasser Masoumi
A comparative study of nanowire crossbar and MOSFET logic implementations. EUROCON (2011)
Kambiz Shojaee, Morteza Gholipour, Ali Afzali-Kusha, Mehrdad Nourani
Comparative study of asynchronous pipeline design methods. IEICE Electron. Express 3 (8) (2006)
Morteza Gholipour, Hamid Shojaee, Ali Afzali-Kusha, Ahmad Khademzadeh, Mehrdad Nourani
An efficient model for performance analysis of asynchronous pipeline design methods. ISCAS (5) (2005)