Erfan Abbasian

Publication Activity (10 Years)

Years Active: 2021-2024
Publications (10 Years): 14

Top Topics

Random Access Memory

Power Reduction

Top Venues

Int. J. Circuit Theory Appl.

Circuits Syst. Signal Process.

IEEE Trans. Circuits Syst. I Regul. Pap.

Microelectron. J.

Publications

Erfan Abbasian, Maryam Nayeri, Elangovan Mani
A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM. Circuits Syst. Signal Process. 43 (8) (2024)
Erfan Abbasian, Sobhan Sofimowloodi
Energy-Efficient Single-Ended Read/Write 10T Near-Threshold SRAM. IEEE Trans. Circuits Syst. I Regul. Pap. 70 (5) (2023)
Erfan Abbasian, Bahare Grailoo, Mahdieh Nayeri
Design of a 10-nm FinFET 11 T Near-Threshold SRAM Cell for Low-Energy Internet-of-Things Applications. Circuits Syst. Signal Process. 42 (5) (2023)
Erfan Abbasian, Maedeh Orouji, Sana Taghipour Anvari, Alireza Asadi, Ehsan Mahmoodi
An ultra-low power and energy-efficient ternary Half-Adder based on unary operators and two ternary 3:1 multiplexers in 32-nm GNRFET technology. Int. J. Circuit Theory Appl. 51 (10) (2023)
Erfan Abbasian
A Highly Stable Low-Energy 10T SRAM for Near-Threshold Operation. IEEE Trans. Circuits Syst. I Regul. Pap. 69 (12) (2022)
Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi
A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology. Circuits Syst. Signal Process. 41 (6) (2022)
Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour
A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins. IEEE Trans. Circuits Syst. I Regul. Pap. 69 (4) (2022)
Erfan Abbasian, Morteza Gholipour
A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications. Int. J. Circuit Theory Appl. 50 (5) (2022)
Erfan Abbasian, Morteza Gholipour
Improved read/write assist mechanism for 10-transistor static random access memory cell. Int. J. Circuit Theory Appl. 50 (10) (2022)
Erfan Abbasian, Shilpi Birla, Morteza Gholipour
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM. Microelectron. J. 123 (2022)
Erfan Abbasian, Morteza Gholipour
Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications. Circuits Syst. Signal Process. 41 (10) (2022)
Erfan Abbasian, Shilpi Birla, Emad Mojaveri Moslem
Design and investigation of stability- and power-improved 11T SRAM cell for low-power devices. Int. J. Circuit Theory Appl. 50 (11) (2022)
Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design. Int. J. Circuit Theory Appl. 49 (11) (2021)
Erfan Abbasian, Morteza Gholipour
Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications. Int. J. Circuit Theory Appl. 49 (4) (2021)