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Erfan Abbasian
ORCID
Publication Activity (10 Years)
Years Active: 2021-2023
Publications (10 Years): 13
Top Topics
Signal Processor
Random Access Memory
Low Power
High Noise
Top Venues
Int. J. Circuit Theory Appl.
IEEE Trans. Circuits Syst. I Regul. Pap.
Circuits Syst. Signal Process.
Microelectron. J.
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Publications
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Erfan Abbasian
,
Sobhan Sofimowloodi
Energy-Efficient Single-Ended Read/Write 10T Near-Threshold SRAM.
IEEE Trans. Circuits Syst. I Regul. Pap.
70 (5) (2023)
Erfan Abbasian
,
Bahare Grailoo
,
Mahdieh Nayeri
Design of a 10-nm FinFET 11 T Near-Threshold SRAM Cell for Low-Energy Internet-of-Things Applications.
Circuits Syst. Signal Process.
42 (5) (2023)
Erfan Abbasian
,
Maedeh Orouji
,
Sana Taghipour Anvari
,
Alireza Asadi
,
Ehsan Mahmoodi
An ultra-low power and energy-efficient ternary Half-Adder based on unary operators and two ternary 3:1 multiplexers in 32-nm GNRFET technology.
Int. J. Circuit Theory Appl.
51 (10) (2023)
Erfan Abbasian
A Highly Stable Low-Energy 10T SRAM for Near-Threshold Operation.
IEEE Trans. Circuits Syst. I Regul. Pap.
69 (12) (2022)
Erfan Abbasian
,
Elangovan Mani
,
Morteza Gholipour
,
Mehrzad Karamimanesh
,
Mohd Sahid
,
Adil Zaidi
A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology.
Circuits Syst. Signal Process.
41 (6) (2022)
Erfan Abbasian
,
Farzaneh Izadinasab
,
Morteza Gholipour
A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins.
IEEE Trans. Circuits Syst. I Regul. Pap.
69 (4) (2022)
Erfan Abbasian
,
Morteza Gholipour
A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications.
Int. J. Circuit Theory Appl.
50 (5) (2022)
Erfan Abbasian
,
Morteza Gholipour
Improved read/write assist mechanism for 10-transistor static random access memory cell.
Int. J. Circuit Theory Appl.
50 (10) (2022)
Erfan Abbasian
,
Shilpi Birla
,
Morteza Gholipour
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM.
Microelectron. J.
123 (2022)
Erfan Abbasian
,
Morteza Gholipour
Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications.
Circuits Syst. Signal Process.
41 (10) (2022)
Erfan Abbasian
,
Shilpi Birla
,
Emad Mojaveri Moslem
Design and investigation of stability- and power-improved 11T SRAM cell for low-power devices.
Int. J. Circuit Theory Appl.
50 (11) (2022)
Erfan Abbasian
,
Morteza Gholipour
,
Farzaneh Izadinasab
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design.
Int. J. Circuit Theory Appl.
49 (11) (2021)
Erfan Abbasian
,
Morteza Gholipour
Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications.
Int. J. Circuit Theory Appl.
49 (4) (2021)