Farzaneh Izadinasab

Publication Activity (10 Years)

Years Active: 2021-2022
Publications (10 Years): 3

Top Topics

Random Access Memory

Signal Noise Ratio

Top Venues

IEEE Trans. Circuits Syst. I Regul. Pap.

Microelectron. J.

Int. J. Circuit Theory Appl.

Publications

Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour
A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins. IEEE Trans. Circuits Syst. I Regul. Pap. 69 (4) (2022)
Farzaneh Izadinasab, Morteza Gholipour
Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology. Microelectron. J. 113 (2021)
Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design. Int. J. Circuit Theory Appl. 49 (11) (2021)