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Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling.
Ying-Yu Chen
Morteza Gholipour
Deming Chen
Published in:
ASP-DAC (2016)
Keyphrases
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simulation study
field effect transistors
high speed
power consumption
higher level
monte carlo
power dissipation
real time
lightweight
power reduction
semiconductor devices
schottky barrier