Hirotoshi Sato

Publication Activity (10 Years)

Years Active: 1996-2017
Publications (10 Years): 2

Top Topics

Leakage Current

Positive And Negative

Application Specific

Top Venues

Publications

Hirotoshi Sato, Kozo Fukumoto, Aiko Oshio
Application of tablet devices with digitizer pens in a chemical presentation course at college of technology. SII (2017)
Hirotoshi Sato, Kozo Fukumoto, Aiko Oshio
Application of tablet devices in a chemical laboratory at college of technology. SII (2016)
Shinji Tanaka, Yuichiro Ishii, Makoto Yabuuchi, Toshiaki Sano, Koji Tanaka, Yasumasa Tsukamoto, Koji Nii, Hirotoshi Sato
A 512-kb 1-GHz 28-nm partially write-assisted dual-port SRAM with self-adjustable negative bias bitline. VLSIC (2014)
Hirotoshi Sato, Tomohisa Wada, Shigeki Ohbayashi, Kunihiko Kozaru, Yasuyuki Okamoto, Yoshiko Higashide, Tadayuki Shimizu, Yukio Maki, Rui Morimoto, Hisakazu Otoi, Tsuyoshi Koga, Hiroki Honda, Makoto Taniguchi, Yutaka Arita, Toru Shiomi
A 500-MHz pipelined burst SRAM with improved SER immunity. IEEE J. Solid State Circuits 34 (11) (1999)
Hirotoshi Sato, Hideaki Nagaoka, Hiroaki Honda, Yukio Maki, Tomohisa Wada, Yutaka Arita, Kazuhito Tsutsumi, Makoto Taniguchi, Michihiro Yamada
A 5-MHz, 3.6-mW, 1.4-V SRAM with nonboosted, vertical bipolar bit-line contact memory cell. IEEE J. Solid State Circuits 33 (11) (1998)
Tadato Yamagata, Hirotoshi Sato, Kore-aki Fujita, Yasumasa Nishimura, Kenji Anami
A distributed globally replaceable redundancy scheme for sub-half-micron ULSI memories and beyond. IEEE J. Solid State Circuits 31 (2) (1996)