David L. Harame

Publication Activity (10 Years)

Years Active: 1996-2018
Publications (10 Years): 4

Top Topics

Rapid Development

Analog Circuits

Wavelet Packet Transform

Top Venues

IEEE J. Solid State Circuits

Publications

David L. Harame
RF FDSOI Technology and modelling. ESSDERC (2018)
David L. Harame
RF FDSOI Technology and Modelling. ESSCIRC (2018)
Jinglin Shi, A. Sidelnicov, Kok Wai J. Chew, Mei See Chin, C. Schippel, J. M. M. dos Santos, Frank Schlaphof, Lutz Meinshausen, John R. Long, David L. Harame
Evolution and Optimization of BEOL MOM Capacitors Across Advanced CMOS Nodes. ESSDERC (2018)
James Hoffman, Jean-Roland Martin-Gosse, Stefan Shopov, Jack J. Pekarik, Renata Camillo-Castillo, Vibhor Jain, David L. Harame, Sorin P. Voinigescu
Analog Circuit Blocks for 80-GHz Bandwidth Frequency-Interleaved, Linear, Large-Swing Front-Ends. IEEE J. Solid State Circuits 51 (9) (2016)
Yi Zhao, Leonardo Vera, John R. Long, David L. Harame
A 10Gb/s 6Vpp differential modulator driver in 0.18µm SiGe-BiCMOS. ISSCC (2013)
James S. Dunn, David L. Harame, Alvin J. Joseph, Stephen A. St. Onge, Natalie B. Feilchenfeld, Louis D. Lanzerotti, Bradley A. Orner, Ephrem G. Gebreselasie, Jeffrey B. Johnson, Douglas D. Coolbaugh, Rick Rassel, Marwan Khater
SiGe BiCMOS Trends - Today and Tomorrow. CICC (2006)
Alvin J. Joseph, David L. Harame, Basanth Jagannathan, Douglas D. Coolbaugh, David C. Ahlgren, John Magerlein, Louis D. Lanzerotti, Natalie B. Feilchenfeld, Stephen A. St. Onge, James S. Dunn, Edward J. Nowak
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS. Proc. IEEE 93 (9) (2005)
Raminderpal Singh, David L. Harame, Bernard S. Meyerson
Special Issue on Silicon Germanium - Advanced Technology, Modeling, and Design. Proc. IEEE 93 (9) (2005)
Tak Shun Dickson Cheung, John R. Long, Youri Tretiakov, David L. Harame
A 21-27GHz self-shielded 4-way power-combining PA balun. CICC (2004)
Yiming Chen, Xiaojuen Yuan, David Scagnelli, James Mecke, Jeff Gross, David L. Harame
Demonstration of a SiGe RF LNA Design Using IBM Design Kits in 0.18um SiGe BiCMOS Technology. DATE (2004)
Alvin J. Joseph, James S. Dunn, Greg G. Freeman, David L. Harame, Douglas Coolbaugh, Robert A. Groves, Kenneth J. Stein, Rich Volant, Seshadri Subbanna, V. S. Marangos, Stephen St. Onge, Ebenezer Eshun, P. Cooper, Jeffrey B. Johnson, Jae-Sung Rieh, Basanth Jagannathan, Vidhya Ramachandran, David Ahlgren, Dawn Wang, X. Wang
Product applications and technology directions with SiGe BiCMOS. IEEE J. Solid State Circuits 38 (9) (2003)
James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg G. Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Youssef Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St. Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping-Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame, Dean A. Herman Jr., Bernard S. Meyerson
Foundation of rf CMOS and SiGe BiCMOS technologies. IBM J. Res. Dev. 47 (2-3) (2003)
David Goren, Michael Zelikson, Rachel Gordin, Israel A. Wagner, Anastasia Barger, Alon Amir, Betty Livshitz, Anatoly Sherman, Youri Tretiakov, Robert A. Groves, J. Park, Donald L. Jordan, Sue E. Strang, Raminderpal Singh, Carl E. Dickey, David L. Harame
On-chip interconnect-aware design and modeling methodology, based on high bandwidth transmission line devices. DAC (2003)
David L. Harame, Kim M. Newton, Raminderpal Singh, Susan L. Sweeney, Sue E. Strang, Jeffrey B. Johnson, Scott M. Parker, Carl E. Dickey, Mete Erturk, Greg J. Schulberg, Donald L. Jordan, David C. Sheridan, Michael P. Keene, John Boquet, Robert A. Groves, Mukesh Kumar, Dean A. Herman Jr., Bernard S. Meyerson
Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies. IBM J. Res. Dev. 47 (2-3) (2003)
Rob A. Rutenbar, David L. Harame, Kurt Johnson, Paul Kempf, Teresa H. Meng, Reza Rofougaran, James Spoto
Mixed signals on mixed-signal: the right next technology. DAC (2003)
Guofu Niu, Zhenrong Jin, John D. Cressler, Rao Rapeta, Alvin J. Joseph, David L. Harame
Transistor noise in SiGe HBT RF technology. IEEE J. Solid State Circuits 36 (9) (2001)
Seshadri Subbanna, L. Larson, Greg G. Freeman, David Ahlgren, Kenneth J. Stein, Carl E. Dickey, James Mecke, A. Rincon, P. Bacon, Robert A. Groves, Mehmet Soyuer, David L. Harame, James S. Dunn, D. Rowe, W. Chon, Dean A. Herman Jr., Bernard S. Meyerson
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs. CICC (2001)
K. M. Walter, B. Ebersman, D. A. Sunderland, G. D. Berg, Greg G. Freeman, Robert A. Groves, D. K. Jadus, David L. Harame
A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTs. IEEE J. Solid State Circuits 33 (9) (1998)
Joachim N. Burghartz, Mehmet Soyuer, Keith A. Jenkins, Michael Kies, Margaret Dolan, Kenneth J. Stein, John Malinowski, David L. Harame
Integrated RF components in a SiGe bipolar technology. IEEE J. Solid State Circuits 32 (9) (1997)
Sorin P. Voinigescu, Michael C. Maliepaard, Jonathan L. Showell, Greg E. Babcock, David Marchesan, Michael Schroter, Peter Schvan, David L. Harame
A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design. IEEE J. Solid State Circuits 32 (9) (1997)
Mehmet Soyuer, Joachim N. Burghartz, Herschel A. Ainspan, Keith A. Jenkins, Peter Xiao, Arvin R. Shahani, Margaret S. Dolan, David L. Harame
An 11 GHz 3-V SiGe voltage controlled oscillator with integrated resonator. IEEE J. Solid State Circuits 32 (9) (1997)
Robert A. Groves, David L. Harame, Dale Jadus
Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technology. IEEE J. Solid State Circuits 32 (9) (1997)
Lakshmi S. Vempati, John D. Cressler, Jeffrey Babcock, Richard C. Jaeger, David L. Harame
Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors. IEEE J. Solid State Circuits 31 (10) (1996)