Bernard S. Meyerson

Publication Activity (10 Years)

Years Active: 1992-2012
Publications (10 Years): 0

Top Venues

Publications

Bernard S. Meyerson
Keynote speaker: Driving innovation in the "post-silicon" world. SoCC (2012)
Bernard S. Meyerson
Collaborative innovation; a new lever in information technology development. Hot Chips Symposium (2006)
Raminderpal Singh, David L. Harame, Bernard S. Meyerson
Special Issue on Silicon Germanium - Advanced Technology, Modeling, and Design. Proc. IEEE 93 (9) (2005)
James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg G. Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Youssef Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St. Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping-Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame, Dean A. Herman Jr., Bernard S. Meyerson
Foundation of rf CMOS and SiGe BiCMOS technologies. IBM J. Res. Dev. 47 (2-3) (2003)
Bernard S. Meyerson
Message from the Vice President for Technology and Chief Technologist, IBM Technology Group. IBM J. Res. Dev. 47 (2-3) (2003)
David L. Harame, Kim M. Newton, Raminderpal Singh, Susan L. Sweeney, Sue E. Strang, Jeffrey B. Johnson, Scott M. Parker, Carl E. Dickey, Mete Erturk, Greg J. Schulberg, Donald L. Jordan, David C. Sheridan, Michael P. Keene, John Boquet, Robert A. Groves, Mukesh Kumar, Dean A. Herman Jr., Bernard S. Meyerson
Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies. IBM J. Res. Dev. 47 (2-3) (2003)
Seshadri Subbanna, L. Larson, Greg G. Freeman, David Ahlgren, Kenneth J. Stein, Carl E. Dickey, James Mecke, A. Rincon, P. Bacon, Robert A. Groves, Mehmet Soyuer, David L. Harame, James S. Dunn, D. Rowe, W. Chon, Dean A. Herman Jr., Bernard S. Meyerson
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs. CICC (2001)
Bernard S. Meyerson
Siliconsgermanium-based mixed-signal technology for optimization of wired and wireless telecommunications. IBM J. Res. Dev. 44 (3) (2000)
Bernard S. Meyerson
Low-temperature Si and Si: Ge epitaxy by ultrahigh vacuum/chemical vapor deposition: Process fundamentals. IBM J. Res. Dev. 44 (1) (2000)
Bernard S. Meyerson
UHV/CVD growth of Si and Si: Ge alloys: chemistry, physics, and device applications. Proc. IEEE 80 (10) (1992)