Chengji Jin

Publication Activity (10 Years)

Years Active: 2017-2024
Publications (10 Years): 10

Top Topics

Field Effect Transistors

Semiconductor Devices

Schottky Barrier

Boundary Conditions

Top Venues

Sci. China Inf. Sci.

Publications

Junru Qu, Dong Liu, Bing Chen, Ying Sun, Xinze Li, Chengji Jin, Jiajia Chen, Haoji Qian, Rongzong Shen, Xiao Yu, Dawei Gao, Ran Cheng, Genquan Han
Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET. IRPS (2024)
Huan Liu, Qiyu Yang, Chengji Jin, Jiajia Chen, Lulu Chou, Xiao Yu, Yan Liu, Genquan Han
Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. Sci. China Inf. Sci. 67 (1) (2024)
Xinze Li, Yiqin Zeng, Yuxuan Wu, Ying Sun, Junru Qu, Chengji Jin, Jiani Gu, Rongzong Shen, Gaobo Lin, Dawei Gao, Xiao Yu, Bing Chen, Ran Cheng, Genquan Han
Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications. IRPS (2024)
Huan Liu, Jiajia Chen, Chengji Jin, Xiao Yu, Yan Liu, Genquan Han
Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics. Sci. China Inf. Sci. 66 (10) (2023)
Yiqin Zeng, Zhetao Ding, Xueyang Li, Minglei Ma, Yue Peng, Rongzong Shen, Gaobo Lin, Chengji Jin, Xiao Yu, Bing Chen, Ran Cheng, Genquan Han
Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology. ESSDERC (2023)
Jiajia Chen, Jiani Gu, Zhi Gong, Chengji Jin, Huan Liu, Xiao Yu, Genquan Han
Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors. ICICDT (2023)
Zhichao Du, Chuanxue Sun, Xiaoyu Dou, Pengpeng Sang, Xuepeng Zhan, Chengji Jin, Jixuan Wu, Jiezhi Chen
Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD. ICTA (2023)
Huan Liu, Jiajia Chen, Chengji Jin, Yan Liu, Genquan Han, Xiao Yu
Mobile Ionic Field Effect Transistors with Amorphous Dielectrics: Device Demonstration and Modeling. ICICDT (2022)
Masaharu Kobayashi, Chengji Jin, Toshiro Hiramoto
Comprehensive Understanding of Negative Capacitance FET From the Perspective of Transient Ferroelectric Model. ASICON (2019)
Bin Lu, Hongliang Lu, Yuming Zhang, Yimen Zhang, Xiaoran Cui, Chengji Jin, Chen Liu
Improved analytical model of surface potential with modified boundary conditions for double gate tunnel FETs. Microelectron. Reliab. 79 (2017)