Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors.
Jiajia ChenJiani GuZhi GongChengji JinHuan LiuXiao YuGenquan HanPublished in: ICICDT (2023)
Keyphrases
- field effect transistors
- steady state
- high density
- schottky barrier
- mathematical analysis
- semiconductor devices
- mobile devices
- mobile phone
- context aware
- mobile environments
- mobile applications
- feedback loop
- location aware
- smart phones
- handheld devices
- mobile computing
- database
- mobile users
- mobile learning
- artificial neural networks
- e learning