Changnam Park

Publication Activity (10 Years)

Years Active: 2017-2022
Publications (10 Years): 7

Top Topics

Electron Beam Lithography

Error Detection

Top Venues

IEEE J. Solid State Circuits

Publications

Taejoong Song, Hoonki Kim, Woojin Rim, Hakchul Jung, Changnam Park, Inhak Lee, Sanghoon Baek, Jonghoon Jung
A 3-nm Gate-All-Around SRAM Featuring an Adaptive Dual-Bitline and an Adaptive Cell-Power Assist Circuit. IEEE J. Solid State Circuits 57 (1) (2022)
Hanwool Jeong, Tae Hyun Kim, Changnam Park, Hoonki Kim, Taejoong Song, Seong-Ook Jung
A Wide-Range Static Current-Free Current Mirror-Based LS With Logic Error Detection for Near-Threshold Operation. IEEE J. Solid State Circuits 56 (2) (2021)
Hanwool Jeong, Se Hyeok Oh, Tae Woo Oh, Hoonki Kim, Changnam Park, Woojin Rim, Taejoong Song, Seong-Ook Jung
Bitline Charge-Recycling SRAM Write Assist Circuitry for $V_{\mathrm{MIN}}$ Improvement and Energy Saving. IEEE J. Solid State Circuits 54 (3) (2019)
Inhak Lee, Hanwool Jeong, Sangyeop Baeck, Siddharth Gupta, Changnam Park, Dongwook Seo, Jaeseung Choi, Jaeyoung Kim, Hoon Kim, Jungmyung Kang, Sunyung Jang, Daeyoung Moon, Sangshin Han, Taehyung Kim, Jaehyun Lim, Younghwan Park, Hyejin Hwang, Jeonseung Kang, Taejoong Song
A Voltage and Temperature Tracking SRAM Assist Supporting 740mV Dual-Rail Offset for Low-Power and High-Performance Applications in 7nm EUV FinFET Technology. ISSCC (2019)
Taejoong Song, Jonghoon Jung, Woojin Rim, Hoonki Kim, Yongho Kim, Changnam Park, Jeongho Do, Sunghyun Park, Sungwee Cho, Hyuntaek Jung, Bongjae Kwon, Hyun-Su Choi, Jaeseung Choi, Jong Shik Yoon
A 7nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications. ISSCC (2018)
Woong Choi, Jongsun Park, Hoonki Kim, Changnam Park, Taejoong Song
Half-and-Half Compare Content Addressable Memory with Charge-Sharing Based Selective Match-Line Precharge Scheme. VLSI Circuits (2018)
Taejoong Song, Hoonki Kim, Woojin Rim, Yongho Kim, Sunghyun Park, Changnam Park, Minsun Hong, Giyong Yang, Jeongho Do, Jinyoung Lim, Seungyoung Lee, Ingyum Kim, Sanghoon Baek, Jonghoon Jung, Daewon Ha, Hyungsoon Jang, Taejung Lee, Chul-Hong Park, Bongjae Kwon, Hyuntaek Jung, Sungwee Cho, Yongjae Choo, Jaeseung Choi
12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis. ISSCC (2017)