Balwinder Raj

Publication Activity (10 Years)

Years Active: 2010-2023
Publications (10 Years): 15

Top Topics

Integrated Circuit

Comparative Analysis

Soft Thresholding

Top Venues

Microelectron. J.

IET Circuits Devices Syst.

Int. J. Semantic Web Inf. Syst.

Publications

Parveen Kumar, Balwinder Raj
Design and simulation of junctionless nanowire tunnel field effect transistor for highly sensitive biosensor. Microelectron. J. 137 (2023)
Parul Sharma, Balwinder Raj, Sandeep Singh Gill
Spintronics Based Non-Volatile MRAM for Intelligent Systems: Memory for Intelligent Systems Design. Int. J. Semantic Web Inf. Syst. 18 (1) (2022)
Manjit Kaur, Neena Gupta, Sanjeev Kumar, Balwinder Raj, Arun K. Singh
Comparative radio-frequency and crosstalk analysis of carbon-based nano-interconnects. IET Circuits Devices Syst. 15 (6) (2021)
Tulika Chawla, Mamta Khosla, Balwinder Raj
Design and simulation of triple metal double-gate germanium on insulator vertical tunnel field effect transistor. Microelectron. J. 114 (2021)
Candy Goyal, Jagpal Singh Ubhi, Balwinder Raj
A low leakage TG-CNTFET-based inexact full adder for low power image processing applications. Int. J. Circuit Theory Appl. 47 (9) (2019)
Amandeep Singh, Mamta Khosla, Balwinder Raj
Design and analysis of dynamically configurable electrostatic doped carbon nanotube tunnel FET. Microelectron. J. 85 (2019)
Jeetendra Singh, Balwinder Raj
Design and Investigation of 7T2M-NVSRAM With Enhanced Stability and Temperature Impact on Store/Restore Energy. IEEE Trans. Very Large Scale Integr. Syst. 27 (6) (2019)
Gurmohan Singh, Balwinder Raj, Rakesh Kumar Sarin
Fault-tolerant design and analysis of QCA-based circuits. IET Circuits Devices Syst. 12 (5) (2018)
Gurmohan Singh, Rakesh Kumar Sarin, Balwinder Raj
Design and analysis of area efficient QCA based reversible logic gates. Microprocess. Microsystems 52 (2017)
Sanjeev Kumar Sharma, Balwinder Raj, Mamta Khosla
A Gaussian approach for analytical subthreshold current model of cylindrical nanowire FET with quantum mechanical effects. Microelectron. J. 53 (2016)
Amandeep Singh, Mamta Khosla, Balwinder Raj
CNTFET modeling and low power SRAM cell design. GCCE (2016)
Sanjeev Kumar Sharma, Balwinder Raj, Mamta Khosla
Performance enhancement of junctionless nanowire FET with laterally graded channel doping and high-K spacers. GCCE (2015)
Amandeep Singh, Mamta Khosla, Balwinder Raj
Comparative analysis of carbon nanotube field effect transistors. GCCE (2015)
Sunil Kumar, Balwinder Raj
Modeling of DG-Tunnel FET for low power VLSI circuit design. IC3 (2015)
Karmjit Singh Sandha, Balwinder Raj
Thermally aware modeling and performance for MWCNT bundle as VLSI interconnects for high performance integrated circuits. GCCE (2015)
Vijay Kumar Sharma, Manisha Pattanaik, Balwinder Raj
PVT variations aware low leakage INDEP approach for nanoscale CMOS circuits. Microelectron. Reliab. 54 (1) (2014)
Sushil Bhushan, Saurabh Khandelwal, Balwinder Raj
Analyzing Different Mode FinFET Based Memory cell at different power supply for Leakage Reduction. BIC-TA (2) (2012)
Shashikant Sharma, Manisha Pattanaik, Balwinder Raj
Signal Stepping Based Multimode Multi-threshold CMOS Technique for Ground Bounce Noise Reduction in Static CMOS Adders. ISED (2012)
Balwinder Raj, Ashok K. Saxena, Sudeb Dasgupta
Quantum Mechanical Analytical Drain Current Modeling and Simulation for Double Gate FinFET Device Using Quasi Fermi Potential Approach. SocProS (2) (2011)
Balwinder Raj, Jatin Mitra, Deepak Kumar Bihani, V. Rangharajan, Ashok K. Saxena, Sudeb Dasgupta
Process Variation Tolerant FinFET Based Robust Low Power SRAM Cell Design at 32 nm Technology. J. Low Power Electron. 7 (2) (2011)
Balwinder Raj, Ashok K. Saxena, Sudeb Dasgupta
Quantum Inversion Charge and Drain Current Analysis for Double Gate FinFET Device: Analytical Modeling and TCAD Simulation Approach. EMS (2010)