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Growth and characterization of ultrathin nitrided silicon oxide films.

Evgeni P. GusevHsu-Chang LuEric L. GarfunkelTorgny GustafssonMartin L. Green
Published in: IBM J. Res. Dev. (1999)
Keyphrases
  • gate dielectrics
  • electrical properties
  • si sio
  • silicon nitride
  • silicon dioxide
  • leakage current
  • gate insulator
  • field effect transistors
  • growth rate
  • room temperature
  • film thickness
  • thin film
  • databases
  • markov chain