Mixed-Voltage I/O Buffer Using NMOS Blocking Considering Gate Oxide Reliability.
Dharmaray NedalgiSaroja V. SiddamalPublished in: J. Circuits Syst. Comput. (2022)
Keyphrases
- silicon dioxide
- field effect transistors
- leakage current
- electrical properties
- low voltage
- gate dielectrics
- virtual memory
- room temperature
- high density
- input output
- metal oxide
- steady state
- mathematical analysis
- replacement policy
- high temperature
- main memory
- buffer size
- buffer pool
- space charge
- power line
- operating system
- short circuit
- database management systems
- nano scale
- fuel cell
- design considerations