Temperature accelerated discharging processes through the bulk of PECVD silicon nitride films for MEMS capacitive switches.
Matroni KoutsoureliN. SiannasGeorge J. PapaioannouPublished in: Microelectron. Reliab. (2017)
Keyphrases
- chemical vapor deposition
- thin film
- high density
- high temperature
- multi layer
- film thickness
- grain size
- silicon nitride
- silicon dioxide
- electrical properties
- process model
- room temperature
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