The Demonstration of Gate Dielectric-fuse 4kb OTP Memory Feasible for Embedded Applications in High-k Metal-gate CMOS Generations and Beyond.
E. R. HsiehC. W. ChangC. C. ChuangH. W. ChenSteve S. ChungPublished in: VLSI Circuits (2019)
Keyphrases
- gate dielectrics
- field effect transistors
- nm technology
- cmos technology
- high density
- electrical properties
- power consumption
- silicon dioxide
- low cost
- steady state
- low power
- small size
- power supply
- leakage current
- metal oxide semiconductor
- high speed
- evolutionary algorithm
- infrared
- memory size
- operating system
- markov chain
- embedded systems
- main memory