Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell.
Soundarya NagarajanDaniel HillerIngmar RatschinskiJoachim KnochThomas MikolajickJens TrommerPublished in: DRC (2023)
Keyphrases
- field effect transistors
- silicon dioxide
- high density
- schottky barrier
- high speed
- chemical vapor deposition
- gate dielectrics
- low cost
- steady state
- mathematical analysis
- gate insulator
- usability evaluation
- semiconductor devices
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- evaluation method
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- evaluation metrics
- transmission line
- transmission electron microscopy
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- si sio
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