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Processor-level reliability simulator for time-dependent gate dielectric breakdown.

Chang-Chih ChenTaizhi LiuSoonyoung ChaLinda S. Milor
Published in: Microprocess. Microsystems (2015)
Keyphrases
  • leakage current
  • gate dielectrics
  • parallel processing
  • silicon dioxide
  • simulation model
  • error correction
  • levels of abstraction
  • error detection
  • higher level