Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric.
Nicola WrachienAndrea CesterDaniele BariRaffaella CapelliRiccardo D'AlpaosMichele MucciniAndrea StefaniGuido TurattiGaudenzio MeneghessoPublished in: Microelectron. Reliab. (2013)
Keyphrases
- high density
- field effect transistors
- thin film
- electron beam
- short circuit
- chemical vapor deposition
- x ray
- integrated circuit
- gate dielectrics
- grain size
- data center
- steady state
- silicon dioxide
- room temperature
- solar cell
- electron microscopy
- space charge
- artificial neural networks
- transmission line
- mathematical analysis
- query processing