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Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer.
Laurent Jalabert
Pierre Temple-Boyer
Gérard Sarrabayrouse
F. Cristiano
B. Colombeau
F. Voillot
C. Armand
Published in:
Microelectron. Reliab. (2001)
Keyphrases
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silicon dioxide
room temperature
si sio
high temperature
transmission electron microscopy
silicon nitride
space charge
high speed
leakage current
field effect transistors
gallium arsenide
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real world
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fuel cell