Improvement of poly-silicon hole induced gate oxide failure by silicon rich oxidation.
Summer F. C. TsengWei-Ting Kary ChienBing-Chu CaiPublished in: Microelectron. Reliab. (2003)
Keyphrases
- silicon dioxide
- field effect transistors
- transmission electron microscopy
- leakage current
- si sio
- x ray
- high density
- metal oxide
- steady state
- cmos technology
- high temperature
- space charge
- low cost
- mathematical analysis
- silicon nitride
- semiconductor devices
- case study
- real world
- low voltage
- high resolution
- high level
- databases
- data sets