Ultrathin Compound Semiconductor in Bulk Planar Junctionless Transistor for High-Performance Nanoscale Transistors.
Bahniman GhoshUzma KhanBall Mukund Mani TripathiM. W. AkramPublished in: J. Low Power Electron. (2013)
Keyphrases
- field effect transistors
- integrated circuit
- gate dielectrics
- gallium arsenide
- silicon dioxide
- low power
- high density
- steady state
- space charge
- equivalent circuit
- circuit design
- semiconductor devices
- mathematical analysis
- high speed
- power consumption
- carbon nanotubes
- atomic force microscopy
- floating gate
- leakage current
- plasma etching
- low cost
- room temperature
- high reliability
- ground plane
- cost effective
- scientific computing
- metal oxide semiconductor
- planar surfaces
- thin film
- computer vision