Detection of early-life failures in high-K metal-gate transistors and ultra low-K inter-metal dielectrics.
Young Moon KimJun SeomunHyung-Ock KimKyung Tae DoJung Yun ChoiKee Sup KimMatthias SauerBernd BeckerSubhasish MitraPublished in: CICC (2013)
Keyphrases
- field effect transistors
- high density
- steady state
- high sensitivity
- low signal to noise ratio
- mathematical analysis
- high rate
- high levels
- automatic detection
- detection method
- detection algorithm
- small size
- significantly lower
- high speed
- power consumption
- false positives
- daily life
- real time
- space charge
- object detection
- high noise
- false alarms
- metal oxide
- detection accuracy
- high detection rate
- cmos technology
- high correlation
- detection rate
- event detection
- anomaly detection
- wide range