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Surface leakage current related failure of power silicon devices operated at high junction temperature.
K. I. Nuttall
Octavian Buiu
V. V. N. Obreja
Published in:
Microelectron. Reliab. (2003)
Keyphrases
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silicon dioxide
space charge
leakage current
high temperature
gate insulator
electric field
gallium arsenide
low voltage
three dimensional
electrical properties
signal to noise ratio
power consumption
surface temperature
low cost
embedded systems
video sequences
si sio