A reverse hysteresis effect of graphene transistors with amorphous silicon gate dielectric.
Qingwei ZhangPing LiYongbo LiaoGang WangRongzhou ZengHeng WangPublished in: Microelectron. Reliab. (2018)
Keyphrases
- high density
- silicon dioxide
- thin film
- field effect transistors
- cmos technology
- space charge
- leakage current
- chemical vapor deposition
- gate dielectrics
- low power
- metal oxide semiconductor
- low voltage
- high temperature
- power consumption
- high speed
- electrical properties
- high power
- gate insulator
- steady state
- data center
- integrated circuit
- data sets
- mathematical analysis
- silicon nitride
- power dissipation
- database
- parallel processing
- image sequences
- information systems
- genetic algorithm
- neural network
- real time