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Yutao Cai
ORCID
Publication Activity (10 Years)
Years Active: 2019-2022
Publications (10 Years): 6
Top Topics
Electrical Properties
Experimental Comparison
Semiconductor Devices
Si Sio
Top Venues
ICICDT
IEEE Access
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Publications
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Jiachen Duan
,
Yuanlei Zhang
,
Ye Liang
,
Yutao Cai
,
Wen Liu
Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer.
ICICDT
(2022)
Ye Liang
,
Yuanlei Zhang
,
Yutao Cai
,
Zhaoyi Wang
,
Yinchao Zhao
,
Huiqing Wen
,
Wen Liu
Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric.
ICICDT
(2021)
Yutao Cai
,
Yang Wang
,
Ye Liang
,
Yuanlei Zhang
,
Wen Liu
,
Huiqing Wen
,
Ivona Z. Mitrovic
,
Cezhou Zhao
Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.
IEEE Access
8 (2020)
Miao Cui
,
Yutao Cai
,
Qinglei Bu
,
Wen Liu
,
Huiqing Wen
,
Ivona Z. Mitrovic
,
Stephen Taylor
,
Paul R. Chalker
,
Cezhou Zhao
The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters.
ICICDT
(2019)
Yutao Cai
,
Yang Wang
,
Miao Cui
,
Wen Liu
,
Huiqing Wen
,
Cezhou Zhao
,
Ivona Z. Mitrovic
,
Stephen Taylor
,
Paul R. Chalker
Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices.
ICICDT
(2019)
Qinglei Bu
,
Yutao Cai
,
Miao Cui
,
Huiqing Wen
,
Wen Liu
Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode With and Without Recessed Anode.
ICICDT
(2019)