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Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.

Yutao CaiYang WangYe LiangYuanlei ZhangWen LiuHuiqing WenIvona Z. MitrovicCezhou Zhao
Published in: IEEE Access (2020)
Keyphrases
  • high voltage
  • semiconductor devices
  • high temperature
  • operating conditions
  • neural network
  • real time
  • field effect transistors
  • normal operation
  • artificial intelligence
  • computational intelligence
  • silicon dioxide