Cezhou Zhao

Publication Activity (10 Years)

Years Active: 2019-2022
Publications (10 Years): 11

Top Topics

Silicon Dioxide

Linear Dimensionality Reduction

Field Effect Transistors

Semiconductor Devices

Top Venues

Publications

Zong Jie Shen, Chun Zhao, Lixing Kang, Yi Sun, Yina Liu, Ivona Z. Mitrovic, Li Yang, Eng Gee Lim, Zhongming Zeng, Cezhou Zhao
Emerging Optical In-Memory Computing Sensor Synapses Based on Low-Dimensional Nanomaterials for Neuromorphic Networks. Adv. Intell. Syst. 4 (9) (2022)
Zong Jie Shen, Chun Zhao, Yina Liu, Li Yang, Cezhou Zhao
Artificial synaptic behavior and its improvement of RRAM device with stacked solution-processed MXene layers. ISOCC (2021)
Zong Jie Shen, Chun Zhao, Ivona Z. Mitrovic, Cezhou Zhao, Yina Liu, Li Yang
Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers. ICICDT (2021)
Zong Jie Shen, Chun Zhao, Ka Lok Man, Yina Liu, Cezhou Zhao
Long-Term Memory Performance with Learning Behavior of Artificial Synaptic Memristor Based on Stacked Solution-Processed Switching Layers. ISCAS (2021)
Zong Jie Shen, Chun Zhao, Li Yang, Cezhou Zhao
Bionic Sypantic Application of OxRRAM Devices. ISOCC (2020)
Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao
Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. IEEE Access 8 (2020)
Miao Cui, Yutao Cai, Qinglei Bu, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker, Cezhou Zhao
The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. ICICDT (2019)
Miao Cui, Ruize Sun, Qinglei Bu, Wen Liu, Huiqing Wen, Ang Li, Yung C. Liang, Cezhou Zhao
Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters. IEEE Access 7 (2019)
Yutao Cai, Yang Wang, Miao Cui, Wen Liu, Huiqing Wen, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker
Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. ICICDT (2019)
Jian Fu Zhang, Z. Ji, M. Duan, Wei Dong Zhang, Cezhou Zhao
Voltage step stress: a technique for reducing test time of device ageing. ICICDT (2019)
Yung C. Liang, Ruize Sun, Yee-Chia Yeo, Cezhou Zhao
Development of GaN Monolithic Integrated Circuits for Power Conversion. CICC (2019)