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Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices.

Yutao CaiYang WangMiao CuiWen LiuHuiqing WenCezhou ZhaoIvona Z. MitrovicStephen TaylorPaul R. Chalker
Published in: ICICDT (2019)
Keyphrases
  • electrical properties
  • semiconductor devices
  • field effect transistors
  • high temperature
  • wide range
  • application layer
  • multi layer
  • electron beam
  • database systems
  • grain size
  • silicon nitride