Sign in
Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric.
Ye Liang
Yuanlei Zhang
Yutao Cai
Zhaoyi Wang
Yinchao Zhao
Huiqing Wen
Wen Liu
Published in:
ICICDT (2021)
Keyphrases
</>
silicon dioxide
electrical properties
transmission line
gate dielectrics
high temperature
information systems
structuring elements
leakage current
adaptive threshold
roc curve
space charge
power system
real time
management information systems
threshold selection
field effect transistors
duty cycle
short circuit