Shi-Zhe Hong

Publication Activity (10 Years)

Years Active: 2020-2021
Publications (10 Years): 9

Top Topics

Hough Transform

Mechanical Engineering

Top Venues

Publications

Shi-Zhe Hong, Shen-Li Chen, Tien-Yu Lan, Yu-Jie Zhou, Zhi-Wei Liu, Jhong-Yi Lai
ESD-Immunity Impact of HV pLDMOS with Drain-side Embedded Horizontal P-type Schottky Modulations. ICCE-TW (2021)
Yu-Jie Zhou, Shen-Li Chen, Tien-Yu Lan, Shi-Zhe Hong, Zhi-Wei Liu, Zhong-Yi Lai
Improved UHV IGBT-Cell for ESD Protection with High Holding Voltage via a 0.5µm BCD Process. ICCE-TW (2021)
Tien-Yu Lan, Shen-Li Chen, Yu-Jie Zhou, Shi-Zhe Hong, Jhong-Yi Lai, Zhi-Wei Liu
Holding-voltage Improvement of UHV Circular nLDMOS Transistors by the Drain-side SCR Engineering. ICCE-TW (2021)
Sheng-Kai Fan, Shen-Li Chen, Po-Lin Lin, Shi-Zhe Hong, Tien-Yu Lan, Yu-Jie Zhou
A Novel SCR-based Schottky Diode and Lightly P-well Additions of HV 60V nLDMOS on ESD Capability. ICCE-TW (2020)
Shi-Zhe Hong, Shen-Li Chen, Sheng-Kai Fan, Po-Lin Lin, Tien-Yu Lan, Yu-Jie Zhou
Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky Devices. ICKII (2020)
Tien-Yu Lan, Shen-Li Chen, Po-Lin Lin, Sheng-Kai Fan, Yu-Jie Zhou, Shi-Zhe Hong, Hung-Wei Chen
ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient. ICKII (2020)
Tien-Yu Lan, Shen-Li Chen, Sheng-Kai Fan, Po-Lin Lin, Yu-Jie Zhou, Shi-Zhe Hong, Hung-Wei Chen
ESD-capability Influences of UHV Circular nLDMOS Transistors by the Drain-side Ladder-step STI. ICCE-TW (2020)
Yu-Jie Zhou, Shen-Li Chen, Pei-Lin Wu, Po-Lin Lin, Sheng-Kai Fan, Tien-Yu Lan, Shi-Zhe Hong
ESD-capability Enhancement of Ultra-high Voltage nLDMOSs by the DPW Discrete Layer. ICKII (2020)
Po-Lin Lin, Shen-Li Chen, Sheng-Kai Fan, Tien-Yu Lan, Yu-Jie Zhou, Shi-Zhe Hong
Improving the ESD Robustness of an Ultra-high Voltage nLDMOS Device with the Embedded Schottky Diode. ICCE-TW (2020)