Holding-voltage Improvement of UHV Circular nLDMOS Transistors by the Drain-side SCR Engineering.
Tien-Yu LanShen-Li ChenYu-Jie ZhouShi-Zhe HongJhong-Yi LaiZhi-Wei LiuPublished in: ICCE-TW (2021)
Keyphrases
- artificial intelligence
- high density
- low power
- integrated circuit
- harmonic functions
- case study
- computer science
- software engineering
- power consumption
- real time
- mechanical engineering
- engineering design
- high voltage
- low voltage
- early warning
- computer aided design
- control algorithm
- significant improvement
- neural network