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ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient.

Tien-Yu LanShen-Li ChenPo-Lin LinSheng-Kai FanYu-Jie ZhouShi-Zhe HongHung-Wei Chen
Published in: ICKII (2020)
Keyphrases
  • space charge
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  • data sets
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  • low cost
  • key features
  • circuit design
  • steady state
  • power consumption
  • integrated circuit
  • fixed length