Login / Signup

Improving the ESD Robustness of an Ultra-high Voltage nLDMOS Device with the Embedded Schottky Diode.

Po-Lin LinShen-Li ChenSheng-Kai FanTien-Yu LanYu-Jie ZhouShi-Zhe Hong
Published in: ICCE-TW (2020)
Keyphrases
  • high voltage
  • operating conditions
  • computer simulation
  • normal operation
  • high speed
  • neural network
  • partial discharge
  • feature selection
  • high density
  • transmission line
  • signal analysis