Login / Signup

ESD-capability Influences of UHV Circular nLDMOS Transistors by the Drain-side Ladder-step STI.

Tien-Yu LanShen-Li ChenSheng-Kai FanPo-Lin LinYu-Jie ZhouShi-Zhe HongHung-Wei Chen
Published in: ICCE-TW (2020)
Keyphrases
  • high density
  • information retrieval
  • post processing
  • power consumption
  • decision support system
  • multi step
  • image processing
  • evolutionary algorithm
  • computer systems
  • hough transform
  • series parallel