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ESD-capability Enhancement of Ultra-high Voltage nLDMOSs by the DPW Discrete Layer.

Yu-Jie ZhouShen-Li ChenPei-Lin WuPo-Lin LinSheng-Kai FanTien-Yu LanShi-Zhe Hong
Published in: ICKII (2020)
Keyphrases
  • high voltage
  • high speed
  • operating conditions
  • image enhancement
  • multi layer
  • normal operation
  • partial discharge
  • image processing
  • support vector
  • continuous variables
  • application layer
  • training data