D. Nirmal

Publication Activity (10 Years)

Years Active: 2013-2024
Publications (10 Years): 12

Top Topics

Electron Microscopy

Digital Circuits

Top Venues

Microelectron. J.

Publications

Binola K. Jebalin, S. Angen Franklin, G. Gifta, P. Prajoon, D. Nirmal
Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone. Microelectron. J. 147 (2024)
Deepti Mongia, Subhash Chander, D. Nirmal
Parameter Extraction for Large Periphery Indigenous AlGaN/GaN HEMT Device. ICDCS (2024)
S. Angen Franklin, Binola K. Jebalin, Subhash Chander, D. Nirmal
Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs. ICDCS (2024)
J. S. Raj Kumar, H. Victor Du John, Binola K. Jebalin, J. Ajayan, Angelin Delighta A, D. Nirmal
A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications. Microelectron. J. 140 (2023)
Adrija Mukherjee, Papiya Debnath, D. Nirmal, Manash Chanda
A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications. Microelectron. J. 133 (2023)
Binola K. Jebalin, G. Gifta, S. Angen, P. Prajoon, D. Nirmal
Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications. Microelectron. J. 138 (2023)
B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, V. Bharath Sreenivasulu, N. Aruna Kumari
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications. Microelectron. J. 140 (2023)
D. Gracia, D. Nirmal, D. Jackuline Moni
Analysis of nanoscale digital circuits using novel drain-gate underlap DMG hetero-dielectric TFET. Microelectron. J. 119 (2022)
J. Ajayan, D. Nirmal, Binola K. Jebalin, S. Sreejith
Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review. Microelectron. J. 130 (2022)
J. Ajayan, D. Nirmal, Shubham Tayal, Sandip Bhattacharya, L. Arivazhagan, A. S. Augustine Fletcher, P. Murugapandiyan, D. Ajitha
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study. Microelectron. J. 114 (2021)
D. Godfrey, D. Nirmal, L. Arivazhagan, D. Godwinraj, N. Mohan Kumar, Yulin Chen, Wenkuan Yeh
Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate. Microelectron. J. 118 (2021)
J. Ajayan, D. Nirmal, P. Mohankumar, Dheena Kuriyan, A. S. Augustine Fletcher, L. Arivazhagan, B. Santhosh Kumar
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review. Microelectron. J. 92 (2019)
Binola K. Jebalin, A. Shobha Rekh, P. Prajoon, N. Mohankumar, D. Nirmal
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. Microelectron. J. 46 (12) (2015)
D. Nirmal, P. Vijayakumar, Divya Mary Thomas, Binola K. Jebalin, N. Mohankumar
Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics. Microelectron. Reliab. 53 (3) (2013)
D. Nirmal, P. Vijayakumar, K. Shruti, N. Mohankumar
Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric. Int. J. Circuit Theory Appl. 41 (6) (2013)