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Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate.
D. Godfrey
D. Nirmal
L. Arivazhagan
D. Godwinraj
N. Mohan Kumar
Yulin Chen
Wenkuan Yeh
Published in:
Microelectron. J. (2021)
Keyphrases
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wide range
high speed
virtual reality
information systems
virtual world
augmented reality
high precision
e learning
integrated circuit
electron microscopy
electron beam
high energy
short circuit