A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications.

Adrija MukherjeePapiya DebnathD. NirmalManash Chanda
Published in: Microelectron. J. (2023)
Keyphrases
  • digital circuits
  • cmos technology
  • low power
  • high speed
  • positive and negative
  • model based diagnosis
  • functional decomposition
  • circuit design
  • analog circuits
  • unit length
  • leakage current