Cyrille Dray

Publication Activity (10 Years)

Years Active: 2002-2023
Publications (10 Years): 7

Top Topics

Top Venues

Publications

Cyrille Dray, Khushal Gelda, Benoit Nadeau-Dostie, Wei Zou, Luc Romain, Jongsin Yun, Harshitha Kodali, Lori Schramm, Martin Keim
Transitioning eMRAM from Pilot Project to Volume Production. ITC (2023)
Fernando García-Redondo, Pranay Prabhat, Mudit Bhargava, Cyrille Dray
A Compact Model for Scalable MTJ Simulation. CoRR (2021)
Jongsin Yun, Benoit Nadeau-Dostie, Martin Keim, Lori Schramm, Cyrille Dray, El Mehdi Boujamaa, Khushal Gelda
MBIST Supported Multi Step Trim for Reliable eMRAM Sensing. ITC (2020)
El Mehdi Boujamaa, Samsudeen Mohamed Ali, Steve Ngueya Wandji, Alexandra Gourio, Suk-Soo Pyo, Gwanhyeob Koh, Yoonjong Song, Taejoong Song, Jongwook Kye, Jean-Christophe Vial, Andrew Sowden, Manuj Rathor, Cyrille Dray
28nm FDSOI STT-MRAM with Current Starved Read Path, 52Ω/Sigma Offset Voltage Sense Amplifier and Fully Trimmable CTAT Reference. VLSI Circuits (2020)
Piyush Jain, Akshay Kumar, Nicolaas Van Winkelhoff, Didier Gayraud, Surya Gupta, Abdelali El Amraoui, Giorgio Palma, Alexandra Gourio, Laurent Vachez, Luc Palau, Jean-Christophe Buy, Cyrille Dray
High Density STT-MRAM compiler design, validation and characterization methodology in 28nm FDSOI technology. DATE (2020)
Jongsin Yun, Benoit Nadeau-Dostie, Martin Keim, Cyrille Dray, El Mehdi Boujamaa
MBIST Support for Reliable eMRAM Sensing. ETS (2020)
Salmen Mraihi, El Mehdi Boujamaa, Cyrille Dray, Jacques-Olivier Klein
Offset Analysis and Design Optimization of a Dynamic Sense Amplifier for Resistive Memories. ISVLSI (2017)
Cyrille Dray, Philippe Gendrier
A Novel Memory Array Based on an Annular Single-Poly EPROM Cell for Use in Standard CMOS Technology. MTDT (2002)