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28nm FDSOI STT-MRAM with Current Starved Read Path, 52Ω/Sigma Offset Voltage Sense Amplifier and Fully Trimmable CTAT Reference.

El Mehdi BoujamaaSamsudeen Mohamed AliSteve Ngueya WandjiAlexandra GourioSuk-Soo PyoGwanhyeob KohYoonjong SongTaejoong SongJongwook KyeJean-Christophe VialAndrew SowdenManuj RathorCyrille Dray
Published in: VLSI Circuits (2020)
Keyphrases
  • authoring tool
  • low voltage
  • design considerations
  • random access memory
  • machine learning
  • learning algorithm