Akinobu Teramoto

Publication Activity (10 Years)

Years Active: 2001-2020
Publications (10 Years): 3

Top Topics

Highly Accurate

Fluorescence Microscopy Images

Top Venues

Sensors, Cameras, and Systems for Industrial and Scientific Applications

Publications

Ryo Akimoto, Rihito Kuroda, Akinobu Teramoto, Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa
Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes. IRPS (2020)
Norichika Ogata, Akihisa Shina, Takayuki Komiya, Yoji Iizuka, Ken Matsuse, Fuminobu Imaizumi, Tomoyuki Suwa, Akinobu Teramoto
An Electrical Impedance Biosensor Array for Tracking Moving Cells. IEEE SENSORS (2018)
Akinobu Teramoto, Keiichi Hashimoto, Tomoyuki Suwa, Jun-ichi Tsuchimoto, Marie Hayashi, Hyeonwoo Park, Shigetoshi Sugawa
Reliability of MgO in magnetic tunnel junctions formed by MgO sputtering and Mg oxidation. IRPS (2018)
A. Yonezawa, Rihito Kuroda, Akinobu Teramoto, T. Obara, Shigetoshi Sugawa
A statistical evaluation of effective time constants of random telegraph noise with various operation timings of in-pixel source follower transistors. IMSE (2014)
Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
High-speed and highly accurate evaluation of electrical characteristics in MOSFETs. ICICDT (2013)
Rihito Kuroda, A. Yonezawa, Akinobu Teramoto, T. L. Li, Yasuhisa Tochigi, Shigetoshi Sugawa
A statistical evaluation of low frequency noise of in-pixel source follower-equivalent transistors with various channel types and body bias. Sensors, Cameras, and Systems for Industrial and Scientific Applications (2013)
Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers. ESSDERC (2012)
Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Tadahiro Ohmi
Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces. IEICE Trans. Electron. (5) (2009)
Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
Accurate negative bias temperature instability lifetime prediction based on hole injection. Microelectron. Reliab. 48 (10) (2008)
Kazufumi Watanabe, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction. Microelectron. Reliab. 47 (2-3) (2007)
Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi
Circuit level prediction of device performance degradation due to negative bias temperature stress. Microelectron. Reliab. 47 (6) (2007)
Koutarou Tanaka, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
High quality gate insulator film formation on SiC using by microwave-excited high-density plasma. Microelectron. Reliab. 47 (4-5) (2007)
Akinobu Teramoto, H. Umeda, K. Azamawari, K. Kobayashi, K. Shiga, J. Komori, Y. Ohno, A. Shigetomi
films in a wide electric field range. Microelectron. Reliab. 41 (1) (2001)