Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes.
Ryo AkimotoRihito KurodaAkinobu TeramotoTakezo MawakiShinya IchinoTomoyuki SuwaShigetoshi SugawaPublished in: IRPS (2020)
Keyphrases
- statistical analysis
- low voltage
- leakage current
- shape space
- cmos technology
- arbitrary shape
- noise level
- shape analysis
- missing data
- noisy data
- noise model
- shape model
- shape recognition
- gaussian noise
- statistical methods
- shape matching
- shape descriptors
- noise reduction
- random noise
- signal to noise ratio
- silicon dioxide
- image processing
- multiple input
- source signals
- additive noise
- clinical data