Abhijit Biswas

Publication Activity (10 Years)

Years Active: 2007-2024
Publications (10 Years): 17

Top Topics

Dynamical Systems

High Speed Camera

Top Venues

IET Circuits Devices Syst.

IEEE Trans. Haptics

Publications

David I. Ketcheson, Abhijit Biswas
Approximation of arbitrarily high-order PDEs by first-order hyperbolic relaxation. CoRR (2024)
Abhijit Biswas, David I. Ketcheson, Benjamin Seibold, David Shirokoff
Algebraic Structure of the Weak Stage Order Conditions for Runge-Kutta Methods. SIAM J. Numer. Anal. 62 (1) (2024)
Sagar R. Siva Vidya, Pooja Jonnalagadda, Abhijit Biswas
Characterization of Tool Eccentricity of a CNC Milling Machine Using High Speed Imaging. ICST (2023)
Abhijit Biswas, David I. Ketcheson
Multiple-Relaxation Runge Kutta Methods for Conservative Dynamical Systems. CoRR (2023)
Kallolini Banerjee, Abhijit Biswas
Enhanced analog/RF performance of hybrid charge plasma based junctionless C-FinFET amplifiers at 10 nm technology node. Microelectron. J. 131 (2023)
Abhijit Biswas, David I. Ketcheson, Steven Roberts, Benjamin Seibold, David Shirokoff
Explicit Runge Kutta Methods that Alleviate Order Reduction. CoRR (2023)
Abhijit Biswas, David I. Ketcheson
Accurate Solution of the Nonlinear Schrödinger Equation via Conservative Multiple-Relaxation ImEx Methods. CoRR (2023)
Abhijit Biswas, David I. Ketcheson
Multiple-Relaxation Runge Kutta Methods for Conservative Dynamical Systems. J. Sci. Comput. 97 (1) (2023)
Abhijit Biswas, Dushyanta Dutta
Interference Cancellation and Efficient Channel Allocation for Primary and Secondary Users Using Hybrid Cognitive (M2M) Mac Routing Protocol. Int. J. Inf. Secur. Priv. 16 (2) (2022)
Sudipta Majumder, Abhijit Biswas
Optimal MAC Scheduling Algorithm for Time-Sensitive Applications in Multi-UE Scenarios in 5G NR MmWave. CICBA (2022)
Abhijit Biswas, David I. Ketcheson, Benjamin Seibold, David Shirokoff
Design of DIRK Schemes with High Weak Stage Order. CoRR (2022)
Abhijit Biswas, Anwar Hussain
Design and Analysis of a New Reduced Switch Scalable MIN Fat Tree Topology. Computación y Sistemas 26 (2) (2022)
Abhijit Biswas, David I. Ketcheson, Benjamin Seibold, David Shirokoff
Algebraic Structure of the Weak Stage Order Conditions for Runge-Kutta Methods. CoRR (2022)
Abhijit Biswas, Benjamin Seibold
Infinite Time Solutions of Numerical Schemes for Advection Problems. CoRR (2020)
Sumedha Dasgupta, Chandrima Mondal, Abhijit Biswas
Role of grooving angle of 14-nm-InAs channel quantum well MOSFETs in improving analogue/RF and linearity performance. IET Circuits Devices Syst. 13 (8) (2019)
Debapriya Roy, Abhijit Biswas
Effects of asymmetric underlap spacers on nanoscale junctionless transistors and design of optimised CMOS amplifiers. IET Circuits Devices Syst. 13 (4) (2019)
Abhijit Biswas, Manivannan Muniyandi, Mandayam A. Srinivasan
Affordable Wideband Sensor Coupled Vibrotactile Actuator Systems for Psychophysical Experiments. EuroHaptics (1) (2016)
Abhijit Biswas, Manivannan Muniyandi, Mandayam A. Srinivasan
Multiscale Layered Biomechanical Model of the Pacinian Corpuscle. IEEE Trans. Haptics 8 (1) (2015)
Abhijit Biswas, Manivannan Muniyandi, Mandayam A. Srinivasan
Vibrotactile Sensitivity Threshold: Nonlinear Stochastic Mechanotransduction Model of the Pacinian Corpuscle. IEEE Trans. Haptics 8 (1) (2015)
Abhijit Biswas, Swagata Bhattacherjee
Temperature dependent model for threshold voltage and subthreshold slope of strained-Si channel MOSFETs with a polysilicon gate. Microelectron. Reliab. 54 (8) (2014)
Abhijit Biswas, Swagata Bhattacherjee
Accurate modeling of the influence of back gate bias and interface roughness on the threshold voltage of nanoscale DG MOSFETs. Microelectron. Reliab. 53 (3) (2013)
P. S. Das, Abhijit Biswas
on n-GaAs substrates. Microelectron. Reliab. 52 (1) (2012)
Hamid Hemmati, Abhijit Biswas, Ivan B. Djordjevic
Deep-Space Optical Communications: Future Perspectives and Applications. Proc. IEEE 99 (11) (2011)
Swagata Bhattacherjee, Abhijit Biswas
Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation. Microelectron. Reliab. 51 (6) (2011)
P. S. Das, Abhijit Biswas
films on n-GaAs substrates. Microelectron. Reliab. 50 (12) (2010)
Hamid Hemmati, Abhijit Biswas, Don M. Boroson
Prospects for Improvement of Interplanetary Laser Communication Data Rates by 30 dB. Proc. IEEE 95 (10) (2007)
Abhijit Biswas, Bruce E. Moision, William T. Roberts, William H. Farr, Andrew Gray, Kevin Quirk, Jon Hamkins, Michael K. Cheng, Jonathan Gin, Michael A. Nakashima, Gerardo G. Ortiz, Sabino Piazzolla, Carl Christian Liebe, David L. Losh
Palomar Receive Terminal (PRT) for the Mars Laser Communication Demonstration (MLCD) Project. Proc. IEEE 95 (10) (2007)