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Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation.
Swagata Bhattacherjee
Abhijit Biswas
Published in:
Microelectron. Reliab. (2011)
Keyphrases
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gate dielectrics
wide range
digital government
multiple input
objective function
high precision
multi channel
field effect transistors
low cost
cost effective