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Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors.
Yutaka Terao
Takuji Hosoi
Takuma Kobayashi
Takayoshi Shimura
Heiji Watanabe
Published in:
IRPS (2022)
Keyphrases
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metal oxide
electron microscopy
x ray
electrical properties
solid state
leakage current
field effect transistors
silicon dioxide
high speed
si sio
three dimensional
thin film
short circuit
high density
fuel cell
artificial neural networks
neural network
multiple input
expert systems