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Testing for gate oxide short defects using the detectability interval paradigm.

Jean Marc GallièreFlorence AzaïsMariane ComteMichel Renovell
Published in: it Inf. Technol. (2014)
Keyphrases
  • silicon dioxide
  • leakage current
  • field effect transistors
  • test cases
  • image quality
  • software development life cycle
  • databases
  • learning algorithm
  • case study
  • high quality
  • x ray
  • software testing
  • thin film transistor