Solution Processed ZnSnO Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric.
T. S. ZhaoC. ZhaoC. Z. ZhaoW. Y. XuL. YangIvona Z. MitrovicS. HallEng Gee LimS. C. YuPublished in: ICICDT (2019)
Keyphrases
- thin film
- silicon nitride
- high density
- room temperature
- electron microscopy
- chemical vapor deposition
- grain size
- short circuit
- multi layer
- solar cell
- white light interferometry
- electrical properties
- neural network
- field effect transistors
- low density
- silicon dioxide
- machine learning
- data center
- data analysis
- optimal solution
- plasma etching