Voltage acceleration of time-dependent breakdown of ultra-thin gate dielectrics.

Thomas Pompl Michael Röhner

Published in: Microelectron. Reliab. (2005)

Keyphrases

electrical properties
gate dielectrics
leakage current
high speed
field effect transistors
power system
travel time
transmission line
si sio
decision trees
duty cycle
metal oxide
genetic algorithm
learning algorithm
operating conditions