Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness.
Ching-Lin FanYi-Yan LinYan-Hang YangHung-Che ChenPublished in: IEICE Trans. Electron. (2010)
Keyphrases
- leakage current
- electrical properties
- field effect transistors
- si sio
- film thickness
- metal oxide
- room temperature
- low voltage
- thin film transistor
- simulated annealing
- steady state
- gate dielectrics
- infrared
- silicon dioxide
- power line
- genetic algorithm
- high density
- power plant
- neural network
- finite element analysis
- x ray
- tft lcd
- three dimensional