Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy.
W. K. FongC. F. ZhuB. H. LeungC. SuryaB. SundaravelE. Z. LuoJianbin XuI. H. WilsonPublished in: Microelectron. Reliab. (2002)
Keyphrases
- chemical vapor deposition
- thin film
- room temperature
- phased array
- rf sputtering
- chemical reactions
- radio frequency
- magnetic field
- high density
- plasma etching
- grain size
- three dimensional
- relevance feedback
- structuring elements
- dna computing
- film thickness
- chemical reaction
- drug discovery
- molecular structure
- ni fe
- cross section
- acyclic database schemes
- neural network
- metal oxide
- liquid crystal displays
- molecular dynamics
- x ray